Product Summary

The MRF317 is a NPN silicon RF power transistor. It is designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range.

Parametrics

MRF317 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 35 Vdc; (2)Collector–Base Voltage VCBO: 65 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 12Adc; Collector Current — Peak (10 seconds) IC: 18Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 270W; Derate above 25℃ PD: 1.54W/℃; (6)Storage Temperature Range Tstg: –65 to +150 ℃.

Features

MRF317 features: (1)Guaranteed Performance at 150 MHz, 28 Vdc; Output Power = 100 W; Minimum Gain = 9.0 dB; (2)Built-in Matching Network for Broadband Operation; (3)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR; (4)Gold Metallization System for High Reliability; (5)High Output Saturation Power-Ideally Suited for 30 W Carrier/120 W Peak AM Amplifier Service; (6)Guaranteed Performance in Broadband Test Fixture.

Diagrams

MRF317 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF317
MRF317
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Data Sheet
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Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF317
MRF317
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MRF321
MRF321
Other

Data Sheet
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MRF325
MRF325
Other

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MRF326
MRF326
Other

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MRF392
MRF392
M/A-COM Technology Solutions
Transistors RF Bipolar Power 100-400MHz 125Watts 28Volt Gain 10dB
Data Sheet
0-1: $52.20
1-10: $50.46
10-25: $48.72
25-50: $46.98
MRF393
MRF393
M/A-COM Technology Solutions
Transistors RF Bipolar Power 30-500MHz 100Watts 28Volt Gain 8.5dB
Data Sheet
0-1: $60.51
1-10: $58.49
10-25: $56.47
25-50: $54.46