Product Summary
The IRF2804 is a automotive MOSFET. It is specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of IRF2804 combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parametrics
IRF2804 absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V (Silicon limited):280A; (2)Continuous Drain Current, VGS @ 10V:200A; (3)Continuous Drain Current, VGS @ 10V (Package limited):75A; (4)Pulsed Drain Current:1080A; (5)Power Dissipation:330W; (6)Linear Derating Factor:2.2W/℃ ; (7)Gate-to-Source Voltage:±20V; (8)Single Pulse Avalanche Energy:670mJ ; (9)Single Pulse Avalanche Energy Tested Value:1160mJ; (10)Operating Junction and Storage Temperature Range:-55℃ to +175℃; (11)Soldering Temperature, for 10 seconds:300℃ (1.6mm from case ).
Features
IRF2804 features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Repetitive Avalanche Allowed up to Tjmax.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF2804 |
MOSFET N-CH 40V 75A TO-220AB |
Data Sheet |
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IRF2804L |
International Rectifier |
MOSFET N-CH 40V 75A TO-262 |
Data Sheet |
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IRF2804LPBF |
International Rectifier |
MOSFET MOSFT 40V 280A 2.3mOhm 160nC |
Data Sheet |
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IRF2804PBF |
International Rectifier |
MOSFET MOSFT 40V 280A 2.3mOhm 160nC Qg |
Data Sheet |
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IRF2804S |
Other |
Data Sheet |
Negotiable |
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IRF2804S-7P |
MOSFET N-CH 40V 160A D2PAK7 |
Data Sheet |
Negotiable |
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IRF2804S-7PPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF2804SPBF |
International Rectifier |
MOSFET |
Data Sheet |
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