Product Summary

The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This HGTG10N120BND has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The HGTG10N120BND is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49302.

Parametrics

HGTG10N120BND absolute maximum ratings: (1)Collector to Emitter Voltage, BVCES: 1200 V; (2)Collector Current Continuous, At TC = 25℃, IC25: 35 A; At TC = 110℃, IC110: 17 A; (3)Collector Current Pulsed, ICM: 80 A; (4)Gate to Emitter Voltage Continuous, VGES: ±20 V; (5)Gate to Emitter Voltage Pulsed, VGEM: ±30 V; (6)Switching Safe Operating Area at TJ = 150℃, SSOA: 55A at 1200V; (7)Power Dissipation Total at TC = 25℃, PD: 298 W; (8)Power Dissipation Derating TC > 25℃: 2.38 W/℃; (9)Operating and Storage Junction Temperature Range, TJ, TSTG -55 to 150 ℃; (10)Maximum Lead Temperature for Soldering, TL: 260 ℃; (11)Short Circuit Withstand Time (Note 2) at VGE = 15V, tSC: 8 μs; (12)Short Circuit Withstand Time (Note 2) at VGE = 12V, tSC: 15 μs.

Features

HGTG10N120BND features: (1)35A, 1200V, TC = 25℃; (2)1200V Switching SOA Capability; (3)Typical Fall Time: 140ns at TJ = 150℃; (4)Short Circuit Rating; (5)Low Conduction Loss.

Diagrams

HGTG10N120BND Symbol

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HGTG10N120BND
HGTG10N120BND

Fairchild Semiconductor

IGBT Transistors 35A 1200V N-Ch

Data Sheet

0-1: $2.90
1-25: $2.62
25-100: $2.38
100-250: $2.15
HGTG10N120BND_Q
HGTG10N120BND_Q

Fairchild Semiconductor

IGBT Transistors 35A 1200V N-Ch

Data Sheet

Negotiable