Product Summary

The 2SK2003-01MR is a N-channel MOS-FET. The applications of it include: Switching Regulators, UPS, DC-DC converters, General Purpose Power Amplifier.

Parametrics

2SK2003-01MR absolute maximum ratings: (1)Drain-Source-Voltage VDS: 600 V; (2)Drain-Gate-Voltage(RGS=20KΩ) VDGR: 600 V; (3)Continous Drain Current ID: 4 A; (4)Pulsed Drain Current ID(puls): 16 A; (5)Gate-Source-Voltage VGS: ±30 V; (6)Max. Power Dissipation PD: 40 W; (7)Operating and Storage Temperature Range Tch: 150 ℃; Tstg: -55 ~ +150 ℃.

Features

2SK2003-01MR features: (1)High Speed Switching; (2)Low On-Resistance; (3)No Secondary Breakdown; (4)Low Driving Power; (5)High Voltage; (6)VGS = ± 30V Guarantee; (7)Avalanche Proof.

Diagrams

2SK2003-01MR equivalent circuit

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2SK2003-01MR
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