Product Summary

The 2SK1807 is a silicon N-Channel MOS FET. It is used for high speed power switching.

Parametrics

2SK1807 absolute maximum ratings: (1)Drain to source voltage VDSS: 900 V; (2)Gate to source voltage VGSS: ±30 V; (3)Drain current ID: 4 A; (4)Drain peak current ID(pulse): 10 A; (5)Body to drain diode reverse drain current IDR: 4 A; (6)Channel dissipation Pch: 60 W; (7)Channel temperature Tch: 150 ℃; (8)Storage temperature Tstg: –55 to +150 ℃.

Features

2SK1807 features: (1)Low on-resistance; (2)High speed switching; (3)Low drive current; (4)No secondary breakdown; (5)Suitable for switchingregulator, DC-DC converter.

Diagrams

2SK1807 diagram

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