(Hong Kong)
Product Summary
The 2SC2710 is a silicon NPN epitaxial type TOSHIBA transistor.
Parametrics
2SC2710 absolute maximum ratings: (1)Collector-base voltage VCBO: 35 V; (2)Collector-emitter voltage VCEO: 30 V; (3)Emitter-base voltage VEBO: 5 V; (4)Collector current IC: 800 mA; (5)Base current IB: 160 mA; (6)Collector power dissipation PC: 300 mW; (7)Junction temperature Tj: 150 ℃; (8)Storage temperature range Tstg: -55~150 ℃.
Features
2SC2710 features: (1)High DC current gain: hFE (1) = 100~320; (2)Complementary to 2SA1150.
Diagrams
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 2SC2710 |
Other |
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Data Sheet |
Negotiable |
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